ENHANCED LOCALIZED DEGRADATION AND ANOMALOUS EMISSION SPECTRA OF GA_1-XAL_XAS DOUBLE HETEROSTRUCTURE LASERS INDUCED BY FABRICATION PROCESSES.NEWMAN DH; GODFREY RF; GOODWIN AR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 6; PP. 353-355; BIBL. 11 REF.Article

THEORIE DE L'HETEROCONTACT DES SEMICONDUCTEURS ISOTYPESKEL'MAN IV.1976; IZVEST. AKAD. NAUK KAZAKH. S.S.R., SER. FIZ.-MAT.; S.S.S.R.; DA. 1976; VOL. 14; NO 6; PP. 73-77; ABS. KAZ.; BIBL. 6 REF.Article

GAAS-GA_1-XAL_XAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH DISTRIBUTED BRAGG REFLECTORS.WON TIEN TSANG; SHYH WANG.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 10; PP. 596-598; BIBL. 10 REF.Article

TRANSISTOR SCALING WITH CONSTANT SUBTHRESHOLD LEAKAGESOKEL R.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 85-87; BIBL. 10 REF.Article

PULSE CIRCUITS FOR LASER DIODESFABIAN M.1980; NEW ELECTRON.; ISSN 0047-9624; GBR; DA. 1980; VOL. 13; NO 19; PP. 80-84; 3 P.Article

LIMITATIONS OF THE DIRECT-INDIRECT TRANSITION ON IN₁-X GAXP₁-ZAS_Z IN_1-XGA_XP_1-ZAS_Z HETEROJONCTIONS.HOLONYAK N JR; CHIN R; COLEMAN JJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 2; PP. 635-638; BIBL. 21 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING.MERZ JL; LOGAN RA.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3503-3509; BIBL. 15 REF.Article

RECENT DEVELOPMENTS IN SEMICONDUCTOR INJECTION LASERS.SELWAY PR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 593; PP. 93-96; BIBL. 7 REF.Article

RECENT PROGRESS IN SEMICONDUCTORS LASERS.NANNICHI Y.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 12; PP. 2089-2102; BIBL. 2 P. 1/2Article

STATISTICAL CHARACTERIZATION OF THE LIFETIMES OF CONTINUOUSLY OPERATED (AL, GA)AS DOUBLE-HETEROSTRUCTURE LASERS.JOYCE WB; DIXON RW; HARTMAN RL et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 684-686; BIBL. 9 REF.Article

APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; BABCOCK EJ et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 81-84; BIBL. 14 REF.Article

THE EFFECT OF BUILT-IN DRIFT FIELD AND EMITTER RECOMBINATIONS ON FCVD OF A P-N JUNCTION DIODEJAIN SC; RAY VC.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 515-523; BIBL. 18 REF.Article

WHEN TUBES BEAT CRYSTALS: EARLY RADIO DETECTORSTHACKERAY DPC.1983; IEEE SPECTRUM; ISSN 0018-9235; USA; DA. 1983; VOL. 20; NO 3; PP. 64-69Article

MESOSTRUCTURE ELECTRONICSPRICE PJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 911-914; BIBL. 9 REF.Article

EFFICIENCY OF GAALAS HETEROSTRUCTURE RED LIGHT-EMITTING DIODESNISHIZAWA J; KOIKE M; JIN CC et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2807-2812; BIBL. 12 REF.Article

MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACESMARGARITONDO G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 499-513; BIBL. 84 REF.Article

PLASMA DISPERSION IN A LAYERED ELECTRON GAS: A DETERMINATION IN GAAS-(ALGA)AS HETEROSTRUCTURESOLEGO D; PINCZUK A; GOSSARD AC et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 12; PP. 7867-7870; BIBL. 19 REF.Article

PHOTOCONDUCTIVE PROPERTIES OF THE EVAPORATED CDTE-SINTERED CDS HETEROJUNCTIONSARAIE J; YAMAGIWA SI; MATSUNAMI H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 845-849; BIBL. 11 REF.Article

DOUBLE HETEROJUNCTION NPNGAALAS/GAAS BIPOLAR TRANSISTORBENEKING H; SU LM.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 25-26; BIBL. 2 REF.Article

AUTOMATED CONDUCTIVITY PROFILER FOR MULTILAYER GAAS-(ALGA)AS STRUCTURESSTILES KR; LEE JW.1982; REVIEW OF SCIENTIFIC INSTRUMENTS; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 9; PP. 1449-1451; BIBL. 6 REF.Article

NONRADIATIVE RECOMBINATION IN INGAASP/INP LIGHT SOURCES CAUSING LIGHT EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITYUJI T; IWAMOTO K; LANG R et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 193-195; BIBL. 10 REF.Article

EVALUATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE WAFERS AND LASERS BY X-RAY TOPOGRAPHYSHINODA Y; KAWAKAMI T.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 603-609; BIBL. 20 REF.Article

NATURE DE LA PHOTOCONDUCTION DE L'HETEROSTRUCTURE PSI-NV₂O₅DATIEV KM; NANAJ L; SIL EH et al.1978; ACTA PHYS. CHEM.; HUN; DA. 1978; VOL. 24; NO 3; PP. 415-421; ABS. ENG; BIBL. 7 REF.Article

COMMENTS ON THE NATURE OF ELECTRON LEAKAGE IN IN GA ASP/INP DOUBLE HETEROSTRUCTURECHIU LC; YARIV A.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 305-306; BIBL. 8 REF.Article

ON THE THEORY OF NON-IDEAL HETEROJUNCTIONSSHIK A YA; SHMARTSEV YU V.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 723-734; ABS. RUS; BIBL. 30 REF.Article